Advanced micro- and nanofabrication technology

• Use analytical – linear or nonlinear – modelling for a first optimization iteration of a process sequence development and use analytical modelling to assist interpretation of numerical modelling results
• Account for the interaction between diffusion, oxidation, and nitridation mediated by point defects, and predict the results of these effects on a fabrication process
• Account for the fundamental physics of molecules and atoms in a vacuum chamber and the basic equipment used to produce and measure vacuum and for the use of DC- and RF-generated plasmas for deposition and etching
• Account for how deposition process parameters affect film properties including step coverage and trench filling, and use this understanding to optimize deposition process parameters to meet target specifications if at all possible
• Account for how etch process parameters affect the etch performance including selectivity and anisotropy and based on this tailor the etch parameters for target specifications
• Account for how silicon crystal growth conditions affect the material parameters and interfere with further processing of the wafers, and based on this knowledge select the proper starting wafers for an application
• Account in detail for the physics and photo-chemistry of UV lithography and be able to use this knowledge to optimize the lithography process even in the case of image reversal processing
• Choose the proper doping method for a specified application and understand in detail the consequences of the choice in terms of thermal budget, defects, possible doping level, and control

Physics and chemistry of semiconductor process technologies, including: Crystal growth, epitaxy, thin film technology, low pressure CVD (Chemical Vapor Deposition), thermal oxidation, solid state diffusion, ion implantation, wet and dry etching, micro lithography, and electrical and physical evaluation of materials.

22600, Or equivalent courses

Lectures and problem solving.

The course can be taken as an extension of 22600.